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Glassy – Electret Ferroelectric Random Access Memory (GeRAM)

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dc.contributor.advisor Ioannou,, Dimitrios Georgiou, Vasileia
dc.creator Georgiou, Vasileia 2018-10-22T01:19:54Z 2018-10-22T01:19:54Z 2017
dc.description.abstract Ferroelectric memory devices based on polar polymers are currently the focus of multiple studies. In these devices, the program/erase of memory involves the physical rotation of dipoles by an applied electric field. In the common approach, to obtain fast programming speed the operating temperature needs to be well above the polymer glass transition temperature (Tg) because at temperatures below Tg the dipoles are locked in place. However, fast programming achieved this way means the dipole are easy to rotate, leading to a short retention time.
dc.format.extent 149 pages
dc.language.iso en
dc.rights Copyright 2017 Vasileia Georgiou
dc.subject Electrical engineering en_US
dc.subject ferroelectric en_US
dc.subject high Tg en_US
dc.subject Id-Vg hysteresis en_US
dc.subject non-volatile memory en_US
dc.subject polyimide en_US
dc.title Glassy – Electret Ferroelectric Random Access Memory (GeRAM)
dc.type Dissertation Ph.D. Electrical and Computer Engineering George Mason University

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