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Glassy – Electret Ferroelectric Random Access Memory (GeRAM)

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dc.contributor.advisor Ioannou,, Dimitrios
dc.contributor.author Georgiou, Vasileia
dc.creator Georgiou, Vasileia
dc.date.accessioned 2018-10-22T01:19:54Z
dc.date.available 2018-10-22T01:19:54Z
dc.date.issued 2017
dc.identifier.uri http://hdl.handle.net/1920/11278
dc.description.abstract Ferroelectric memory devices based on polar polymers are currently the focus of multiple studies. In these devices, the program/erase of memory involves the physical rotation of dipoles by an applied electric field. In the common approach, to obtain fast programming speed the operating temperature needs to be well above the polymer glass transition temperature (Tg) because at temperatures below Tg the dipoles are locked in place. However, fast programming achieved this way means the dipole are easy to rotate, leading to a short retention time.
dc.format.extent 149 pages
dc.language.iso en
dc.rights Copyright 2017 Vasileia Georgiou
dc.subject Electrical engineering
dc.subject ferroelectric
dc.subject high Tg
dc.subject Id-Vg hysteresis
dc.subject non-volatile memory
dc.subject polyimide
dc.title Glassy – Electret Ferroelectric Random Access Memory (GeRAM)
dc.type Dissertation
thesis.degree.level Ph.D.
thesis.degree.discipline Electrical and Computer Engineering
thesis.degree.grantor George Mason University


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