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Two-Dimensional Materials: Doping-Induced Variation, Heterojunction FETs and Hybrid Multilayers

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dc.contributor.advisor Li, Qiliang
dc.contributor.author Eshun, Kwesi P.
dc.creator Eshun, Kwesi P.
dc.date 2014-08-28
dc.date.accessioned 2014-10-21T19:53:04Z
dc.date.available 2014-10-21T19:53:04Z
dc.date.issued 2014-10-21
dc.identifier.uri http://hdl.handle.net/1920/9080
dc.description.abstract As the size of Complementary Metal Oxide Semiconductor (CMOS) field effect transistor (FET) approaches its fundamental physical limit, two-dimensional (2D) layered structures, such as transitional metal dichalcogenides (TMDs), have been proposed as the alternative channel materials to extend the Moore’s law. In this thesis, we proposed and studied a new set of device structures based on 2D MoS2/WSe2 heterojunction in order to construct the smallest field effect transistor, whereas the switching is achieved via gated heterojunction. Following a step-by-step approach, we have studied the doping effect of different TMDs, formation of heterojunction between different TMDs and gated field effect transistor based on these 2D heterojunctions. During the study of Doping effect on 2D TMDs, we found that random dopant position led to large variation in electronic properties of 2D materials. Therefore, we focus on the study of 2D heterojunction FET instead of the pn-junction. We have studied the formation and transport properties of 2D heterojunctions, with a focus on MoS2/WSe2 heterojunction as it exhibits the best junction characteristics. We then used the MoS2/WSe2 heterojunctions as the channel materials to construct the smallest FET. Such 2D junction-based FETs exhibited very interesting and attractive device characteristics. This study has successfully demonstrated a new set of device structures and materials in order to achieve 2D FET for the extension of CMOS scaling. The results of this thesis may open a suit of new applications in future electronics. en_US
dc.language.iso en_US en_US
dc.rights Copyright 2014 Kwesi P. Eshun en_US
dc.subject transition metal dichotcogenides en_US
dc.subject heterjunction en_US
dc.subject field effect transistor en_US
dc.subject negative differential resistance en_US
dc.subject monolayer en_US
dc.subject bandstructure en_US
dc.title Two-Dimensional Materials: Doping-Induced Variation, Heterojunction FETs and Hybrid Multilayers en_US
dc.type Thesis en
thesis.degree.name Master of Science in Electrical Engineering en_US
thesis.degree.level Master's en
thesis.degree.discipline Electrical Engineering en
thesis.degree.grantor George Mason University en


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