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Metal Contacts on Low-Dimensional Materials

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dc.contributor.advisor Li, Qiliang YUAN, HUI
dc.creator YUAN, HUI 2015-02-12T02:59:55Z 2015-02-12T02:59:55Z 2014 en_US
dc.description.abstract As the scaling of the microelectronics is reaching nano regime, low-dimensional materials have been of increasing interest for future electronics applications. The low-dimensional materials, such as Si nanowires (SiNWs), carbon nanotubes (CNTs), graphene and transition metal dichalcogenides (TMDs), not only provide small body for further-scaled devices but also bring about new intrinsic properties for application in future optoelectronics, spintronics and so on. However, the small dimensions add significant difficulty for reducing contact resistance in the nanoelectronic devices. This dissertation presents a study of the metal contacts on low-dimensional materials. The focus of this work is on SiNWs and monolayer or few-layer MoS2.
dc.format.extent 104 pages en_US
dc.language.iso en en_US
dc.rights Copyright 2014 HUI YUAN en_US
dc.subject Electrical engineering en_US
dc.subject Materials Science en_US
dc.subject 2-dimensional semiconductor en_US
dc.subject Metal contact en_US
dc.subject Molybdenum Disulfide en_US
dc.subject Si nanowire en_US
dc.title Metal Contacts on Low-Dimensional Materials en_US
dc.type Dissertation en Doctoral en Electrical and Computer Engineering en George Mason University en

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