Mason Archival Repository Service

Metal Contacts on Low-Dimensional Materials

Show simple item record

dc.contributor.advisor Li, Qiliang
dc.contributor.author YUAN, HUI
dc.creator YUAN, HUI
dc.date.accessioned 2015-02-12T02:59:55Z
dc.date.available 2015-02-12T02:59:55Z
dc.date.issued 2014 en_US
dc.identifier.uri https://hdl.handle.net/1920/9194
dc.description.abstract As the scaling of the microelectronics is reaching nano regime, low-dimensional materials have been of increasing interest for future electronics applications. The low-dimensional materials, such as Si nanowires (SiNWs), carbon nanotubes (CNTs), graphene and transition metal dichalcogenides (TMDs), not only provide small body for further-scaled devices but also bring about new intrinsic properties for application in future optoelectronics, spintronics and so on. However, the small dimensions add significant difficulty for reducing contact resistance in the nanoelectronic devices. This dissertation presents a study of the metal contacts on low-dimensional materials. The focus of this work is on SiNWs and monolayer or few-layer MoS2.
dc.format.extent 104 pages en_US
dc.language.iso en en_US
dc.rights Copyright 2014 HUI YUAN en_US
dc.subject Electrical engineering en_US
dc.subject Materials Science en_US
dc.subject 2-dimensional semiconductor en_US
dc.subject Metal contact en_US
dc.subject Molybdenum Disulfide en_US
dc.subject Si nanowire en_US
dc.title Metal Contacts on Low-Dimensional Materials en_US
dc.type Dissertation en
thesis.degree.level Doctoral en
thesis.degree.discipline Electrical and Computer Engineering en
thesis.degree.grantor George Mason University en


Files in this item

This item appears in the following Collection(s)

Show simple item record

Search MARS


Browse

My Account

Statistics