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Browsing Volgenau School of Engineering by Subject "gate dielectric breakdown"

Browsing Volgenau School of Engineering by Subject "gate dielectric breakdown"

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  • Yang, Yang (2010-11-02)
    Aggressive downsizing of individual transistors continues to improve the perfor- mance of integrated circuits. However, as the transistors get smaller, they become more vulnerable to damage by high current and high voltage ...

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