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Novel Non-volatile Memory and Topological Insulator Field-effect Transistors

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dc.contributor.advisor Li, Qiliang
dc.contributor.author Zhu, Hao
dc.creator Zhu, Hao en_US
dc.date.accessioned 2014-08-28T03:17:39Z
dc.date.available 2014-08-28T03:17:39Z
dc.date.issued 2013-08 en_US
dc.identifier.uri https://hdl.handle.net/1920/8804
dc.description.abstract The dimensional scaling of microelectronics to increase the ability of central process unit (CPU) is facing fundamental and physical challenges. The integration of high-performance non-volatile memory as the local memory in CPU will have a transformative impact on mobile electronics and portable systems. This dissertation proposes replacing the static random-access memory (SRAM) which is currently used as the local cache memory in CPU with high-performance Flash-like non-volatile memory for the consideration of memory density and power consumption. I have fabricated, fully characterized and compared different kinds of Flash-like charge-trapping non-volatile memory devices, including high-k dielectric charge-trapping devices, multi-stack discrete memory devices and molecular memory devices. The devices containing redox-active molecules exhibit excellent Program/Erase (P/E) speed, good retention and excellent P/E endurance for more than 109 cycles. The charge storage in these molecule-containing memory devices is naturally derived from the intrinsic redox processes of the molecules under a voltage bias. This is very different with other charge storage mediums in which the charge is stored in the trap centers or as a carrier. The intrinsic redox properties and the naturally derived, stable molecular structure make this memory very robust and reliable.
dc.format.extent 156 pages en_US
dc.language.iso en en_US
dc.rights Copyright 2013 Hao Zhu en_US
dc.subject Engineering en_US
dc.subject Flash memory en_US
dc.subject magnetotransport property en_US
dc.subject molecular SAM en_US
dc.subject non-volatile memory en_US
dc.subject self-aligned FET en_US
dc.subject topological insulator nanowires en_US
dc.title Novel Non-volatile Memory and Topological Insulator Field-effect Transistors en_US
dc.type Dissertation en
thesis.degree.level Doctoral en
thesis.degree.discipline Electrical and Computer Engineering en
thesis.degree.grantor George Mason University en


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