Metal Oxide, Group V-VI Chalcogenides and GaN/AlGaN Photodetectors
Date
2016
Authors
Hasan, Md Rezaul
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Abstract
Structural, electrical and optical properties of metal oxide and Group V-VI chalcogenide based semiconductor materials and their optoelectronic response were studied when used as UV-Visible-NIR photodetectors. Optimization of processing steps was done to achieve better quality films in terms of crystallinity and stoichiometry.The films were thoroughly characterized for their structural, electrical and optical behavior. For visible blind- UV detection, transparent metal oxide (TMO) based photodiodes were fabricated and for UV-NIR broadband detection of wavelength, Group V-VI chalcogenide nanostructure photodiodes were fabricated.
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Keywords
Electrical engineering, Materials Science, Antimony Selenide, Chalcogenide, GaN/AlGaN HEMT, Metal Oxide, THz imaging, UV photodetector