Annealing and Device Characterization of HgCdTe grown on CdTe/Si Substrates

dc.contributor.advisorMulpuri, Rao V.
dc.contributor.authorSimingalam, Sina
dc.creatorSimingalam, Sina
dc.date.accessioned2016-04-19T19:28:48Z
dc.date.available2016-04-19T19:28:48Z
dc.date.issued2015
dc.description.abstractInfrared sensors have long been utilized for personal, commercial, and government applications. Mercury cadmium telluride (MCT) is the highest quality material for infrared detection. Its limitation comes in the substrate that it is grown on. Cadmium zinc telluride (CZT) is the substrate of choice for its ability to be lattice matched to the MCT epilayer grown on it, but its limited size of less than 7x7 cm2 and high cost of $200 cm-2 has led to a push for alternative substrates. Silicon has been utilized as a potential alternative substrate due to its cost of less than $1 cm-2 and size of greater than 8” in diameter. However, it has a lattice mismatch of 19% with MCT, leading to an as-grown dislocation density of 1x107 cm-2 in the MCT epilayer. This is more than two orders of magnitude greater than the dislocation density of 1x105 cm-2 for MCT grown on CZT. The work presented in this dissertation looks at various ways of reducing the dislocation density and its impact on devices.
dc.format.extent121 pages
dc.identifier.urihttps://hdl.handle.net/1920/10168
dc.language.isoen
dc.rightsCopyright 2015 Sina Simingalam
dc.subjectMaterials Science
dc.subjectPhysics
dc.subjectAnnealing
dc.subjectDiode
dc.subjectDislocation Reduction
dc.subjectMesa
dc.subjectPhotovoltaic
dc.titleAnnealing and Device Characterization of HgCdTe grown on CdTe/Si Substrates
dc.typeDissertation
thesis.degree.disciplinePhysics
thesis.degree.grantorGeorge Mason University
thesis.degree.levelDoctoral

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