Strain Engineering of Two Dimensional Transition Metal Dichalcogenides for Electronic Applications

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dc.contributor.advisorLi, Qiliang
dc.contributor.authorYu, Sheng
dc.creatorYu, Sheng
dc.date.accessioned2017-01-29T01:17:28Z
dc.date.available2017-01-29T01:17:28Z
dc.date.issued2016
dc.description.abstractTwo-dimensional (2D) layered materials, such as hexagonal boron nitride (h-BN) and transition metal dichalcogenides (TMDCs), have gained considerable attentions for electronic applications. Their mechanical properties, possible application in body movement, muscle stretching and blood vessel contraction, have also been studied. The MoS2 monolayer, a typical member of 2D TMDCs, becomes piezoelectric after exfoliation from the bulk crystal whereas the inversion symmetry is broken. Therefore, MoS2 nanostructures have become promising in NEMS application in nanopiezotronics, a rapidly emerging field.
dc.format.extent108 pages
dc.identifier.urihttps://hdl.handle.net/1920/10619
dc.language.isoen
dc.rightsCopyright 2016 Sheng Yu
dc.subjectElectrical engineering
dc.subject2D materials
dc.subjectDirac Fermions
dc.subjectMechano-Electric Converter
dc.subjectStrain Effect
dc.titleStrain Engineering of Two Dimensional Transition Metal Dichalcogenides for Electronic Applications
dc.typeDissertation
thesis.degree.disciplineElectrical and Computer Engineering
thesis.degree.grantorGeorge Mason University
thesis.degree.levelPh.D.

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