Metal Oxide, Group V-VI Chalcogenides and GaN/AlGaN Photodetectors

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dc.contributor.advisorMulpuri, Rao
dc.contributor.authorHasan, Md Rezaul
dc.creatorHasan, Md Rezaul
dc.date.accessioned2017-01-29T01:17:29Z
dc.date.available2017-01-29T01:17:29Z
dc.date.issued2016
dc.description.abstractStructural, electrical and optical properties of metal oxide and Group V-VI chalcogenide based semiconductor materials and their optoelectronic response were studied when used as UV-Visible-NIR photodetectors. Optimization of processing steps was done to achieve better quality films in terms of crystallinity and stoichiometry.The films were thoroughly characterized for their structural, electrical and optical behavior. For visible blind- UV detection, transparent metal oxide (TMO) based photodiodes were fabricated and for UV-NIR broadband detection of wavelength, Group V-VI chalcogenide nanostructure photodiodes were fabricated.
dc.format.extent140 pages
dc.identifier.urihttps://hdl.handle.net/1920/10625
dc.language.isoen
dc.rightsCopyright 2016 Md Rezaul Hasan
dc.subjectElectrical engineering
dc.subjectMaterials Science
dc.subjectAntimony Selenide
dc.subjectChalcogenide
dc.subjectGaN/AlGaN HEMT
dc.subjectMetal Oxide
dc.subjectTHz imaging
dc.subjectUV photodetector
dc.titleMetal Oxide, Group V-VI Chalcogenides and GaN/AlGaN Photodetectors
dc.typeDissertation
thesis.degree.disciplineElectrical and Computer Engineering
thesis.degree.grantorGeorge Mason University
thesis.degree.levelPh.D.

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