Novel Non-volatile Memory and Topological Insulator Field-effect Transistors
dc.contributor.advisor | Li, Qiliang | |
dc.contributor.author | Zhu, Hao | |
dc.creator | Zhu, Hao | |
dc.date.accessioned | 2014-08-28T03:17:39Z | |
dc.date.available | 2014-08-28T03:17:39Z | |
dc.date.issued | 2013-08 | |
dc.description.abstract | The dimensional scaling of microelectronics to increase the ability of central process unit (CPU) is facing fundamental and physical challenges. The integration of high-performance non-volatile memory as the local memory in CPU will have a transformative impact on mobile electronics and portable systems. This dissertation proposes replacing the static random-access memory (SRAM) which is currently used as the local cache memory in CPU with high-performance Flash-like non-volatile memory for the consideration of memory density and power consumption. I have fabricated, fully characterized and compared different kinds of Flash-like charge-trapping non-volatile memory devices, including high-k dielectric charge-trapping devices, multi-stack discrete memory devices and molecular memory devices. The devices containing redox-active molecules exhibit excellent Program/Erase (P/E) speed, good retention and excellent P/E endurance for more than 109 cycles. The charge storage in these molecule-containing memory devices is naturally derived from the intrinsic redox processes of the molecules under a voltage bias. This is very different with other charge storage mediums in which the charge is stored in the trap centers or as a carrier. The intrinsic redox properties and the naturally derived, stable molecular structure make this memory very robust and reliable. | |
dc.format.extent | 156 pages | |
dc.identifier.uri | https://hdl.handle.net/1920/8804 | |
dc.language.iso | en | |
dc.rights | Copyright 2013 Hao Zhu | |
dc.subject | Engineering | |
dc.subject | Flash memory | |
dc.subject | Magnetotransport property | |
dc.subject | Molecular SAM | |
dc.subject | Non-volatile memory | |
dc.subject | Self-aligned FET | |
dc.subject | Topological insulator nanowires | |
dc.title | Novel Non-volatile Memory and Topological Insulator Field-effect Transistors | |
dc.type | Dissertation | |
thesis.degree.discipline | Electrical and Computer Engineering | |
thesis.degree.grantor | George Mason University | |
thesis.degree.level | Doctoral |
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