Li, QiliangYUAN, HUI2015-02-122015-02-122014https://hdl.handle.net/1920/9194As the scaling of the microelectronics is reaching nano regime, low-dimensional materials have been of increasing interest for future electronics applications. The low-dimensional materials, such as Si nanowires (SiNWs), carbon nanotubes (CNTs), graphene and transition metal dichalcogenides (TMDs), not only provide small body for further-scaled devices but also bring about new intrinsic properties for application in future optoelectronics, spintronics and so on. However, the small dimensions add significant difficulty for reducing contact resistance in the nanoelectronic devices. This dissertation presents a study of the metal contacts on low-dimensional materials. The focus of this work is on SiNWs and monolayer or few-layer MoS2.104 pagesenCopyright 2014 HUI YUANElectrical engineeringMaterials Science2-dimensional semiconductorMetal contactMolybdenum DisulfideSi nanowireDissertation