Ioannou,, DimitriosGeorgiou, Vasileia2018-10-222018-10-222017https://hdl.handle.net/1920/11278Ferroelectric memory devices based on polar polymers are currently the focus of multiple studies. In these devices, the program/erase of memory involves the physical rotation of dipoles by an applied electric field. In the common approach, to obtain fast programming speed the operating temperature needs to be well above the polymer glass transition temperature (Tg) because at temperatures below Tg the dipoles are locked in place. However, fast programming achieved this way means the dipole are easy to rotate, leading to a short retention time.149 pagesenCopyright 2017 Vasileia GeorgiouElectrical engineeringFerroelectricHigh TgId-Vg hysteresisNon-volatile memoryPolyimideDissertation