Metal Contacts on Low-Dimensional Materials

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dc.contributor.advisorLi, Qiliang
dc.contributor.authorYUAN, HUI
dc.creatorYUAN, HUI
dc.date.accessioned2015-02-12T02:59:55Z
dc.date.available2015-02-12T02:59:55Z
dc.date.issued2014
dc.description.abstractAs the scaling of the microelectronics is reaching nano regime, low-dimensional materials have been of increasing interest for future electronics applications. The low-dimensional materials, such as Si nanowires (SiNWs), carbon nanotubes (CNTs), graphene and transition metal dichalcogenides (TMDs), not only provide small body for further-scaled devices but also bring about new intrinsic properties for application in future optoelectronics, spintronics and so on. However, the small dimensions add significant difficulty for reducing contact resistance in the nanoelectronic devices. This dissertation presents a study of the metal contacts on low-dimensional materials. The focus of this work is on SiNWs and monolayer or few-layer MoS2.
dc.format.extent104 pages
dc.identifier.urihttps://hdl.handle.net/1920/9194
dc.language.isoen
dc.rightsCopyright 2014 HUI YUAN
dc.subjectElectrical engineering
dc.subjectMaterials Science
dc.subject2-dimensional semiconductor
dc.subjectMetal contact
dc.subjectMolybdenum Disulfide
dc.subjectSi nanowire
dc.titleMetal Contacts on Low-Dimensional Materials
dc.typeDissertation
thesis.degree.disciplineElectrical and Computer Engineering
thesis.degree.grantorGeorge Mason University
thesis.degree.levelDoctoral

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