GALLIUM OXIDE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR ANALYTICAL MODELING AND POWER TRANSISTOR DESIGN TRADES

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dc.contributor.advisorPeixoto, Nathalia
dc.contributor.authorMoser, Neil Austin
dc.creatorMoser, Neil Austin
dc.date.accessioned2018-10-22T01:21:21Z
dc.date.available2018-10-22T01:21:21Z
dc.date.issued2017
dc.description.abstractGallium oxide has recently emerged as a promising semiconductor material for high voltage switch applications owing to its ultra-wide band gap of ~4.8 eV and the corresponding expected critical field strength of ~8MV/cm. β-Ga2O3, which is the most stable polymorph, also has the advantage of melt grown, defect free, large diameter native substrates which are traditionally much more cost effective than vapor phase substrates such as those for incumbent power switching materials like gallium nitride and silicon carbide. Using these substrates, researchers have already developed high quality homoepitaxial channel layers with n-type doping concentrations ranging from 1016 to >1020 cm-3 using group IV materials as dopants. Further, several groups have fabricated metal semiconductor and metal oxide semiconductor field effect transistors (MESFET and MOSFET) using these channel layers with excellent current control and high breakdown voltages
dc.format.extent197 pages
dc.identifier.urihttps://hdl.handle.net/1920/11327
dc.language.isoen
dc.rightsCopyright 2017 Neil Austin Moser
dc.subjectElectrical engineering
dc.subjectAnalytical Model
dc.subjectGallium Oxide
dc.subjectMOSFET
dc.subjectPower Switch
dc.titleGALLIUM OXIDE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR ANALYTICAL MODELING AND POWER TRANSISTOR DESIGN TRADES
dc.typeDissertation
thesis.degree.disciplineElectrical and Computer Engineering
thesis.degree.grantorGeorge Mason University
thesis.degree.levelPh.D.

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