Glassy – Electret Ferroelectric Random Access Memory (GeRAM)

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dc.contributor.advisorIoannou,, Dimitrios
dc.contributor.authorGeorgiou, Vasileia
dc.creatorGeorgiou, Vasileia
dc.date.accessioned2018-10-22T01:19:54Z
dc.date.available2018-10-22T01:19:54Z
dc.date.issued2017
dc.description.abstractFerroelectric memory devices based on polar polymers are currently the focus of multiple studies. In these devices, the program/erase of memory involves the physical rotation of dipoles by an applied electric field. In the common approach, to obtain fast programming speed the operating temperature needs to be well above the polymer glass transition temperature (Tg) because at temperatures below Tg the dipoles are locked in place. However, fast programming achieved this way means the dipole are easy to rotate, leading to a short retention time.
dc.format.extent149 pages
dc.identifier.urihttps://hdl.handle.net/1920/11278
dc.language.isoen
dc.rightsCopyright 2017 Vasileia Georgiou
dc.subjectElectrical engineering
dc.subjectFerroelectric
dc.subjectHigh Tg
dc.subjectId-Vg hysteresis
dc.subjectNon-volatile memory
dc.subjectPolyimide
dc.titleGlassy – Electret Ferroelectric Random Access Memory (GeRAM)
dc.typeDissertation
thesis.degree.disciplineElectrical and Computer Engineering
thesis.degree.grantorGeorge Mason University
thesis.degree.levelPh.D.

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